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IRFBF30L

IRFBF30L

For Reference Only

Part Number IRFBF30L
PNEDA Part # IRFBF30L
Description MOSFET N-CH 900V 3.6A TO-262
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,148
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFBF30L Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFBF30L
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFBF30L, IRFBF30L Datasheet (Total Pages: 9, Size: 1,147.67 KB)
PDFIRFBF30L Datasheet Cover
IRFBF30L Datasheet Page 2 IRFBF30L Datasheet Page 3 IRFBF30L Datasheet Page 4 IRFBF30L Datasheet Page 5 IRFBF30L Datasheet Page 6 IRFBF30L Datasheet Page 7 IRFBF30L Datasheet Page 8 IRFBF30L Datasheet Page 9

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IRFBF30L Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.7Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs78nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 25V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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