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IRFBL3703

IRFBL3703

For Reference Only

Part Number IRFBL3703
PNEDA Part # IRFBL3703
Description MOSFET N-CH 30V 260A SUPER D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,466
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFBL3703 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFBL3703
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFBL3703, IRFBL3703 Datasheet (Total Pages: 8, Size: 98.56 KB)
PDFIRFBL3703 Datasheet Cover
IRFBL3703 Datasheet Page 2 IRFBL3703 Datasheet Page 3 IRFBL3703 Datasheet Page 4 IRFBL3703 Datasheet Page 5 IRFBL3703 Datasheet Page 6 IRFBL3703 Datasheet Page 7 IRFBL3703 Datasheet Page 8

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IRFBL3703 Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C260A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Rds On (Max) @ Id, Vgs2.5mOhm @ 76A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs209nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8250pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 300W (Tc)
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackageSUPER D2-PAK
Package / CaseSuper D2-Pak

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