Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFC4768ED

IRFC4768ED

For Reference Only

Part Number IRFC4768ED
PNEDA Part # IRFC4768ED
Description MOSFET N-CH WAFER
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,538
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFC4768ED Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFC4768ED
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFC4768ED Datasheet
  • where to find IRFC4768ED
  • Infineon Technologies

  • Infineon Technologies IRFC4768ED
  • IRFC4768ED PDF Datasheet
  • IRFC4768ED Stock

  • IRFC4768ED Pinout
  • Datasheet IRFC4768ED
  • IRFC4768ED Supplier

  • Infineon Technologies Distributor
  • IRFC4768ED Price
  • IRFC4768ED Distributor

IRFC4768ED Specifications

ManufacturerInfineon Technologies
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

The Products You May Be Interested In

TK560A65Y,S4X

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

560mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id

4V @ 240µA

Gate Charge (Qg) (Max) @ Vgs

14.5nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

380pF @ 300V

FET Feature

-

Power Dissipation (Max)

30W

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

Manufacturer

IXYS

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

47A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

45mOhm @ 44A, 10V

Vgs(th) (Max) @ Id

3.5V @ 3mA

Gate Charge (Qg) (Max) @ Vgs

190nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6800pF @ 100V

FET Feature

Super Junction

Power Dissipation (Max)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS247™

Package / Case

ISOPLUS247™

IRF7476

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

15A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.8V, 4.5V

Rds On (Max) @ Id, Vgs

8mOhm @ 15A, 4.5V

Vgs(th) (Max) @ Id

1.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

2550pF @ 6V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

IPD50R950CEBTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

13V

Rds On (Max) @ Id, Vgs

950mOhm @ 1.2A, 13V

Vgs(th) (Max) @ Id

3.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

10.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

231pF @ 100V

FET Feature

Super Junction

Power Dissipation (Max)

34W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Manufacturer

IXYS

Series

HiPerFET™, PolarHV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

145mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

92nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

5300pF @ 25V

FET Feature

-

Power Dissipation (Max)

830W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD (IXFH)

Package / Case

TO-247-3

Recently Sold

MBR0540-TP

MBR0540-TP

Micro Commercial Co

DIODE SCHOTTKY 40V 500MA SOD123

LTST-C191KRKT

LTST-C191KRKT

Lite-On Inc.

LED RED CLEAR SMD

AS4C256M16D3B-12BIN

AS4C256M16D3B-12BIN

Alliance Memory, Inc.

IC DRAM 4G PARALLEL 96FBGA

0452007.MRL

0452007.MRL

Littelfuse

FUSE BRD MNT 7A 72VAC 60VDC 2SMD

74AHCT125PW,118

74AHCT125PW,118

Nexperia

IC BUF NON-INVERT 5.5V 14TSSOP

MAX3387EEUG

MAX3387EEUG

Maxim Integrated

IC TRANSCEIVER FULL 3/3 24TSSOP

SQ3427EEV-T1-GE3

SQ3427EEV-T1-GE3

Vishay Siliconix

MOSFET P-CH 60V 5.5A 6TSOP

ADP5054ACPZ-R7

ADP5054ACPZ-R7

Analog Devices

IC REG CTRLR BUCK 48LFCSP

XU208-128-TQ64-C10

XU208-128-TQ64-C10

XMOS

IC MCU 32BIT ROMLESS 64TQFP

AD7495AR

AD7495AR

Analog Devices

IC ADC 12BIT SAR 8SOIC

A700X157M010ATE015

A700X157M010ATE015

KEMET

CAP ALUM POLY 150UF 20% 10V SMD

FDD86540

FDD86540

ON Semiconductor

MOSFET N-CH 60V 50A DPAK-3