IRFC4768ED
For Reference Only
| Part Number | IRFC4768ED |
| PNEDA Part # | IRFC4768ED |
| Description | MOSFET N-CH WAFER |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 2,538 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 13 - Jun 18 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IRFC4768ED Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IRFC4768ED |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
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- Delivery date: usually 2 to 7 working days.
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Notes
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IRFC4768ED Specifications
| Manufacturer | Infineon Technologies |
| Series | * |
| FET Type | - |
| Technology | - |
| Drain to Source Voltage (Vdss) | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | - |
| Mounting Type | - |
| Supplier Device Package | - |
| Package / Case | - |
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Manufacturer Infineon Technologies Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 105mOhm @ 11A, 10V Vgs(th) (Max) @ Id 4.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 50V FET Feature - Power Dissipation (Max) 100W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 13V Rds On (Max) @ Id, Vgs 950mOhm @ 1.2A, 13V Vgs(th) (Max) @ Id 3.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 231pF @ 100V FET Feature Super Junction Power Dissipation (Max) 34W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series PowerTrench®, SyncFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 35A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.2mOhm @ 35A, 10V Vgs(th) (Max) @ Id 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 133nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8965pF @ 13V FET Feature - Power Dissipation (Max) 2.5W (Ta), 96W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-PQFN (5x6) Package / Case 8-PowerTDFN |
Manufacturer IXYS Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 47A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 45mOhm @ 44A, 10V Vgs(th) (Max) @ Id 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 100V FET Feature Super Junction Power Dissipation (Max) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS247™ Package / Case ISOPLUS247™ |
