IRFH5007TR2PBF
For Reference Only
Part Number | IRFH5007TR2PBF |
PNEDA Part # | IRFH5007TR2PBF |
Description | MOSFET N-CH 75V 17A 5X6 PQFN |
Manufacturer | Infineon Technologies |
Unit Price | Request a Quote |
In Stock | 7,848 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 6 - Nov 11 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
IRFH5007TR2PBF Resources
Brand | Infineon Technologies |
ECAD Module | |
Mfr. Part Number | IRFH5007TR2PBF |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IRFH5007TR2PBF Datasheet
- where to find IRFH5007TR2PBF
- Infineon Technologies
- Infineon Technologies IRFH5007TR2PBF
- IRFH5007TR2PBF PDF Datasheet
- IRFH5007TR2PBF Stock
- IRFH5007TR2PBF Pinout
- Datasheet IRFH5007TR2PBF
- IRFH5007TR2PBF Supplier
- Infineon Technologies Distributor
- IRFH5007TR2PBF Price
- IRFH5007TR2PBF Distributor
IRFH5007TR2PBF Specifications
Manufacturer | Infineon Technologies |
Series | HEXFET® |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 5.9mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id | 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 98nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4290pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 3.6W (Ta), 156W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-PQFN (5x6) |
Package / Case | 8-PowerTDFN |
The Products You May Be Interested In
Diodes Incorporated Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.8mOhm @ 90A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 95.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4556pF @ 30V FET Feature - Power Dissipation (Max) 3.9W (Ta), 180W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Infineon Technologies Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 39A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 7V Rds On (Max) @ Id, Vgs 20mOhm @ 23A, 7V Vgs(th) (Max) @ Id 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 31nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 15V FET Feature - Power Dissipation (Max) 57W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Infineon Technologies Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5mOhm @ 80A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |
IXYS Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 11mOhm @ 60A, 10V Vgs(th) (Max) @ Id 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10.5nF @ 25V FET Feature - Power Dissipation (Max) 735W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-268HV Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 400V Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1Ohm @ 3.3A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 600pF @ 25V FET Feature - Power Dissipation (Max) 74W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |