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IRFH5220TR2PBF

IRFH5220TR2PBF

For Reference Only

Part Number IRFH5220TR2PBF
PNEDA Part # IRFH5220TR2PBF
Description MOSFET N-CH 200V 3.8A PQFN
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,770
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFH5220TR2PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFH5220TR2PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IRFH5220TR2PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C3.8A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs99.9mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1380pF @ 50V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 8.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePQFN (5x6)
Package / Case8-VQFN Exposed Pad

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