Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFH6200TRPBF

IRFH6200TRPBF

For Reference Only

Part Number IRFH6200TRPBF
PNEDA Part # IRFH6200TRPBF
Description MOSFET N-CH 20V 49A 8-PQFN
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,736
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFH6200TRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFH6200TRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFH6200TRPBF Datasheet
  • where to find IRFH6200TRPBF
  • Infineon Technologies

  • Infineon Technologies IRFH6200TRPBF
  • IRFH6200TRPBF PDF Datasheet
  • IRFH6200TRPBF Stock

  • IRFH6200TRPBF Pinout
  • Datasheet IRFH6200TRPBF
  • IRFH6200TRPBF Supplier

  • Infineon Technologies Distributor
  • IRFH6200TRPBF Price
  • IRFH6200TRPBF Distributor

IRFH6200TRPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C49A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs0.95mOhm @ 50A, 10V
Vgs(th) (Max) @ Id1.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs230nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds10890pF @ 10V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 156W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PQFN (5x6)
Package / Case8-PowerVDFN

The Products You May Be Interested In

SIHA22N60E-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

86nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1920pF @ 100V

FET Feature

-

Power Dissipation (Max)

35W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220 Full Pack

Package / Case

TO-220-3 Full Pack

BUK6215-75C,118

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

57A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

15mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

61.8nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

3900pF @ 25V

FET Feature

-

Power Dissipation (Max)

128W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

BSC054N04NSGATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

17A (Ta), 81A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 27µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2800pF @ 20V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 57W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-5

Package / Case

8-PowerTDFN

AOY423

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

15A (Ta), 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V, 20V

Rds On (Max) @ Id, Vgs

6.7mOhm @ 20A, 20V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2760pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 90W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-251B

Package / Case

TO-251-3 Stub Leads, IPak

STT3PF30L

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ II

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

165mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

420pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.6W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-6

Package / Case

SOT-23-6

Recently Sold

CMS15(TE12L,Q,M)

CMS15(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 3A M-FLAT

WSL0603R1000FEA18

WSL0603R1000FEA18

Vishay Dale

RES 0.1 OHM 1% 1/5W 0603

VLS252012HBX-2R2M-1

VLS252012HBX-2R2M-1

TDK

FIXED IND 2.2UH 2.3A 102 MOHM

LTC1326IS8-2.5#PBF

LTC1326IS8-2.5#PBF

Linear Technology/Analog Devices

IC PREC TRPL SUPPLY MONITR 8SOIC

NFE31PT222Z1E9L

NFE31PT222Z1E9L

Murata

FILTER LC(T) 2200PF SMD

ES1JAF

ES1JAF

ON Semiconductor

DIODE GEN PURP 600V 1A DO214AD

PM-L54P

PM-L54P

Panasonic Industrial Automation Sales

SENSOR OPT SLOT PNP MODULE

EXB-2HV510JV

EXB-2HV510JV

Panasonic Electronic Components

RES ARRAY 8 RES 51 OHM 1506

IS25CQ032-JBLE

IS25CQ032-JBLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 32M SPI 104MHZ 8SOIC

PC817XNNIP0F

PC817XNNIP0F

SHARP/Socle Technology

OPTOISOLATOR 5KV TRANS 4SMD

LTV-817S-TA1-D

LTV-817S-TA1-D

Lite-On Inc.

OPTOISOLATR 5KV TRANSISTOR 4-SMD

BAT54CWT1G

BAT54CWT1G

ON Semiconductor

DIODE ARRAY SCHOTTKY 30V SOT323