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IRFH7187TRPBF

IRFH7187TRPBF

For Reference Only

Part Number IRFH7187TRPBF
PNEDA Part # IRFH7187TRPBF
Description MOSFET N-CH 100V 18A
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,192
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFH7187TRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFH7187TRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFH7187TRPBF, IRFH7187TRPBF Datasheet (Total Pages: 8, Size: 488.89 KB)
PDFIRFH7187TRPBF Datasheet Cover
IRFH7187TRPBF Datasheet Page 2 IRFH7187TRPBF Datasheet Page 3 IRFH7187TRPBF Datasheet Page 4 IRFH7187TRPBF Datasheet Page 5 IRFH7187TRPBF Datasheet Page 6 IRFH7187TRPBF Datasheet Page 7 IRFH7187TRPBF Datasheet Page 8

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IRFH7187TRPBF Specifications

ManufacturerInfineon Technologies
SeriesFASTIRFET™, HEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C18A (Ta), 105A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id3.6V @ 150µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2116pF @ 50V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 132W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PQFN (5x6)
Package / Case8-PowerVDFN

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