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IRFH7190TRPBF

IRFH7190TRPBF

For Reference Only

Part Number IRFH7190TRPBF
PNEDA Part # IRFH7190TRPBF
Description MOSFET N-CH 100V 15A
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,272
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFH7190TRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFH7190TRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFH7190TRPBF, IRFH7190TRPBF Datasheet (Total Pages: 9, Size: 505.57 KB)
PDFIRFH7190TRPBF Datasheet Cover
IRFH7190TRPBF Datasheet Page 2 IRFH7190TRPBF Datasheet Page 3 IRFH7190TRPBF Datasheet Page 4 IRFH7190TRPBF Datasheet Page 5 IRFH7190TRPBF Datasheet Page 6 IRFH7190TRPBF Datasheet Page 7 IRFH7190TRPBF Datasheet Page 8 IRFH7190TRPBF Datasheet Page 9

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IRFH7190TRPBF Specifications

ManufacturerInfineon Technologies
SeriesFASTIRFET™, HEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C15A (Ta), 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7.5mOhm @ 49A, 10V
Vgs(th) (Max) @ Id3.6V @ 100µA
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1685pF @ 50V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePQFN (5x6)
Package / Case8-PowerTDFN

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