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IRFHM8337TRPBF

IRFHM8337TRPBF

For Reference Only

Part Number IRFHM8337TRPBF
PNEDA Part # IRFHM8337TRPBF
Description MOSFET N-CH 30V 12A 8PQFN
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,258
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 12 - May 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFHM8337TRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFHM8337TRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IRFHM8337TRPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs12.4mOhm @ 12A, 10V
Vgs(th) (Max) @ Id2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs8.1nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds755pF @ 15V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PQFN (3.3x3.3), Power33
Package / Case8-PowerTDFN

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