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IRFHM8363TRPBF

IRFHM8363TRPBF

For Reference Only

Part Number IRFHM8363TRPBF
PNEDA Part # IRFHM8363TRPBF
Description MOSFET 2N-CH 30V 11A 8PQFN
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,154
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFHM8363TRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFHM8363TRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays

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IRFHM8363TRPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C11A
Rds On (Max) @ Id, Vgs14.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1165pF @ 10V
Power - Max2.7W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device Package8-PQFN (3.3x3.3), Power33

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