IRFI4110GPBF
For Reference Only
| Part Number | IRFI4110GPBF |
| PNEDA Part # | IRFI4110GPBF |
| Description | MOSFET N-CH 100V 72A TO220AB |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 108,900 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 19 - May 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IRFI4110GPBF Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IRFI4110GPBF |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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IRFI4110GPBF Specifications
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 72A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 43A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 290nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 9540pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 61W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB Full-Pak |
| Package / Case | TO-220-3 Full Pack |
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Manufacturer Central Semiconductor Corp Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 300mOhm @ 2A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6nC @ 5V Vgs (Max) 20V Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V FET Feature - Power Dissipation (Max) 1.2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-89 Package / Case TO-243AA |
Manufacturer STMicroelectronics Series SuperMESH™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.5Ohm @ 2.25A, 10V Vgs(th) (Max) @ Id 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 41.5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1160pF @ 25V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
