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IRFI630G

IRFI630G

For Reference Only

Part Number IRFI630G
PNEDA Part # IRFI630G
Description MOSFET N-CH 200V 5.9A TO220FP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,986
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFI630G Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFI630G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFI630G, IRFI630G Datasheet (Total Pages: 8, Size: 1,547.29 KB)
PDFIRFI630G Datasheet Cover
IRFI630G Datasheet Page 2 IRFI630G Datasheet Page 3 IRFI630G Datasheet Page 4 IRFI630G Datasheet Page 5 IRFI630G Datasheet Page 6 IRFI630G Datasheet Page 7 IRFI630G Datasheet Page 8

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IRFI630G Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs400mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds800pF @ 25V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3 Full Pack, Isolated Tab

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