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IRFI640G

IRFI640G

For Reference Only

Part Number IRFI640G
PNEDA Part # IRFI640G
Description MOSFET N-CH 200V 9.8A TO220FP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,920
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 28 - Jul 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFI640G Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFI640G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFI640G, IRFI640G Datasheet (Total Pages: 8, Size: 1,805.31 KB)
PDFIRFI640G Datasheet Cover
IRFI640G Datasheet Page 2 IRFI640G Datasheet Page 3 IRFI640G Datasheet Page 4 IRFI640G Datasheet Page 5 IRFI640G Datasheet Page 6 IRFI640G Datasheet Page 7 IRFI640G Datasheet Page 8

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IRFI640G Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C9.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs180mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1300pF @ 25V
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3 Full Pack, Isolated Tab

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