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IRFI830G

IRFI830G

For Reference Only

Part Number IRFI830G
PNEDA Part # IRFI830G
Description MOSFET N-CH 500V 3.1A TO220FP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,190
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFI830G Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFI830G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFI830G, IRFI830G Datasheet (Total Pages: 8, Size: 1,545.64 KB)
PDFIRFI830G Datasheet Cover
IRFI830G Datasheet Page 2 IRFI830G Datasheet Page 3 IRFI830G Datasheet Page 4 IRFI830G Datasheet Page 5 IRFI830G Datasheet Page 6 IRFI830G Datasheet Page 7 IRFI830G Datasheet Page 8

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IRFI830G Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.5Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds610pF @ 25V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3 Full Pack, Isolated Tab

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