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IRFIBF30G

IRFIBF30G

For Reference Only

Part Number IRFIBF30G
PNEDA Part # IRFIBF30G
Description MOSFET N-CH 900V 1.9A TO220FP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,254
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFIBF30G Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFIBF30G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFIBF30G, IRFIBF30G Datasheet (Total Pages: 8, Size: 1,456.93 KB)
PDFIRFIBF30G Datasheet Cover
IRFIBF30G Datasheet Page 2 IRFIBF30G Datasheet Page 3 IRFIBF30G Datasheet Page 4 IRFIBF30G Datasheet Page 5 IRFIBF30G Datasheet Page 6 IRFIBF30G Datasheet Page 7 IRFIBF30G Datasheet Page 8

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IRFIBF30G Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.7Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs78nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 25V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3 Full Pack, Isolated Tab

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