IRFP250
For Reference Only
| Part Number | IRFP250 |
| PNEDA Part # | IRFP250_179 |
| Description | MOSFET N-CH 200V 30A TO-247AD |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 8,046 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 26 - Jul 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IRFP250 Resources
| Brand | IXYS |
| ECAD Module |
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| Mfr. Part Number | IRFP250 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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IRFP250 Specifications
| Manufacturer | IXYS |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 18A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2970pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AD |
| Package / Case | TO-247-3 |
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Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 6.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 55mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1580pF @ 30V FET Feature - Power Dissipation (Max) 2.15W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 36A (Ta), 235A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6660pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 167W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN, 5 Leads |
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 5.6mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 35nC @ 5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 5026pF @ 25V FET Feature - Power Dissipation (Max) 167W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK56, Power-SO8 Package / Case SC-100, SOT-669 |
