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IRFR1N60ATRRPBF

IRFR1N60ATRRPBF

For Reference Only

Part Number IRFR1N60ATRRPBF
PNEDA Part # IRFR1N60ATRRPBF
Description MOSFET N-CH 600V 1.4A DPAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,744
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 23 - May 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFR1N60ATRRPBF Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFR1N60ATRRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFR1N60ATRRPBF, IRFR1N60ATRRPBF Datasheet (Total Pages: 11, Size: 243.73 KB)
PDFIRFR1N60ATRRPBF Datasheet Cover
IRFR1N60ATRRPBF Datasheet Page 2 IRFR1N60ATRRPBF Datasheet Page 3 IRFR1N60ATRRPBF Datasheet Page 4 IRFR1N60ATRRPBF Datasheet Page 5 IRFR1N60ATRRPBF Datasheet Page 6 IRFR1N60ATRRPBF Datasheet Page 7 IRFR1N60ATRRPBF Datasheet Page 8 IRFR1N60ATRRPBF Datasheet Page 9 IRFR1N60ATRRPBF Datasheet Page 10 IRFR1N60ATRRPBF Datasheet Page 11

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IRFR1N60ATRRPBF Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7Ohm @ 840mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds229pF @ 25V
FET Feature-
Power Dissipation (Max)36W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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