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IRFR3412PBF

IRFR3412PBF

For Reference Only

Part Number IRFR3412PBF
PNEDA Part # IRFR3412PBF
Description MOSFET N-CH 100V 48A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,302
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFR3412PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFR3412PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFR3412PBF, IRFR3412PBF Datasheet (Total Pages: 11, Size: 228.48 KB)
PDFIRFR3412TRPBF Datasheet Cover
IRFR3412TRPBF Datasheet Page 2 IRFR3412TRPBF Datasheet Page 3 IRFR3412TRPBF Datasheet Page 4 IRFR3412TRPBF Datasheet Page 5 IRFR3412TRPBF Datasheet Page 6 IRFR3412TRPBF Datasheet Page 7 IRFR3412TRPBF Datasheet Page 8 IRFR3412TRPBF Datasheet Page 9 IRFR3412TRPBF Datasheet Page 10 IRFR3412TRPBF Datasheet Page 11

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IRFR3412PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs25mOhm @ 29A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs89nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3430pF @ 25V
FET Feature-
Power Dissipation (Max)140W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

1700pF @ 10V

FET Feature

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Power Dissipation (Max)

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Infineon Technologies

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Infineon Technologies

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HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

26A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

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Power Dissipation (Max)

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

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Power Dissipation (Max)

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