IRFR3504ZTRRPBF
For Reference Only
| Part Number | IRFR3504ZTRRPBF |
| PNEDA Part # | IRFR3504ZTRRPBF |
| Description | MOSFET N-CH 40V 42A DPAK |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 4,482 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 9 - May 14 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IRFR3504ZTRRPBF Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IRFR3504ZTRRPBF |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IRFR3504ZTRRPBF Datasheet
- where to find IRFR3504ZTRRPBF
- Infineon Technologies
- Infineon Technologies IRFR3504ZTRRPBF
- IRFR3504ZTRRPBF PDF Datasheet
- IRFR3504ZTRRPBF Stock
- IRFR3504ZTRRPBF Pinout
- Datasheet IRFR3504ZTRRPBF
- IRFR3504ZTRRPBF Supplier
- Infineon Technologies Distributor
- IRFR3504ZTRRPBF Price
- IRFR3504ZTRRPBF Distributor
IRFR3504ZTRRPBF Specifications
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 42A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1510pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
The Products You May Be Interested In
|
Manufacturer Taiwan Semiconductor Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 58A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 12mOhm @ 30A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3902pF @ 30V FET Feature - Power Dissipation (Max) 36W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-PDFN (5x6) Package / Case 8-PowerTDFN |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9.3nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 225pF @ 25V FET Feature - Power Dissipation (Max) 3.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92L Package / Case TO-226-3, TO-92-3 Long Body |
Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 75mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 825pF @ 25V FET Feature - Power Dissipation (Max) 1.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-MSOP Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 650mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1990pF @ 25V FET Feature - Power Dissipation (Max) 27.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262F Package / Case TO-262-3 Full Pack, I²Pak |
Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 20.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 220mOhm @ 13.1A, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 124nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V FET Feature - Power Dissipation (Max) 208W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3-1 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
