Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFR3706TRPBF

IRFR3706TRPBF

For Reference Only

Part Number IRFR3706TRPBF
PNEDA Part # IRFR3706TRPBF
Description MOSFET N-CH 20V 75A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,832
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFR3706TRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFR3706TRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFR3706TRPBF, IRFR3706TRPBF Datasheet (Total Pages: 11, Size: 221.02 KB)
PDFIRFR3706TRLPBF Datasheet Cover
IRFR3706TRLPBF Datasheet Page 2 IRFR3706TRLPBF Datasheet Page 3 IRFR3706TRLPBF Datasheet Page 4 IRFR3706TRLPBF Datasheet Page 5 IRFR3706TRLPBF Datasheet Page 6 IRFR3706TRLPBF Datasheet Page 7 IRFR3706TRLPBF Datasheet Page 8 IRFR3706TRLPBF Datasheet Page 9 IRFR3706TRLPBF Datasheet Page 10 IRFR3706TRLPBF Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFR3706TRPBF Datasheet
  • where to find IRFR3706TRPBF
  • Infineon Technologies

  • Infineon Technologies IRFR3706TRPBF
  • IRFR3706TRPBF PDF Datasheet
  • IRFR3706TRPBF Stock

  • IRFR3706TRPBF Pinout
  • Datasheet IRFR3706TRPBF
  • IRFR3706TRPBF Supplier

  • Infineon Technologies Distributor
  • IRFR3706TRPBF Price
  • IRFR3706TRPBF Distributor

IRFR3706TRPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.8V, 10V
Rds On (Max) @ Id, Vgs9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds2410pF @ 10V
FET Feature-
Power Dissipation (Max)88W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

IPS110N12N3GBKMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

120V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4310pF @ 60V

FET Feature

-

Power Dissipation (Max)

136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3

Package / Case

TO-251-3 Stub Leads, IPak

IRL3715STRRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

54A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

14mOhm @ 26A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1060pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 71W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

APT41M80L

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

43A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

210mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

260nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

8070pF @ 25V

FET Feature

-

Power Dissipation (Max)

1040W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264 [L]

Package / Case

TO-264-3, TO-264AA

RJK6013DPE-00#J3

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

11A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

700mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

37.5nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1450pF @ 25V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-LDPAK

Package / Case

SC-83

AO4710

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

SRFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

11.8mOhm @ 12.7A, 10V

Vgs(th) (Max) @ Id

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

43nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

2376pF @ 15V

FET Feature

Schottky Diode (Body)

Power Dissipation (Max)

3.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

DLP11TB800UL2L

DLP11TB800UL2L

Murata

CMC 100MA 2LN 80 OHM SMD

MT25QU01GBBB8E12-0SIT

MT25QU01GBBB8E12-0SIT

Micron Technology Inc.

IC FLASH 1G SPI 166MHZ TBGA

PIC12F1612-I/SN

PIC12F1612-I/SN

Microchip Technology

IC MCU 8BIT 3.5KB FLASH 8SOIC

VIPER100A

VIPER100A

STMicroelectronics

IC SWIT PWM SMPS CM PENTAWATT5

MT28GU01GAAA1EGC-0SIT

MT28GU01GAAA1EGC-0SIT

Micron Technology Inc.

IC FLASH 1G PARALLEL 64TBGA

VN10LP

VN10LP

Diodes Incorporated

MOSFET N-CH 60V 270MA TO92-3

0CNL200.V

0CNL200.V

Littelfuse

FUSE STRIP 200A 32VAC/VDC BOLT

2N3390

2N3390

ON Semiconductor

TRANS NPN 25V 0.5A TO-92

ADUC7026BSTZ62

ADUC7026BSTZ62

Analog Devices

IC MCU 32BIT 62KB FLASH 80LQFP

VUB72-12NOXT

VUB72-12NOXT

IXYS

BRIDGE RECT 3P 1.2KV 75A V1A-PAK

BLM18PG121SN1D

BLM18PG121SN1D

Murata

FERRITE BEAD 120 OHM 0603 1LN

LAN8710AI-EZK

LAN8710AI-EZK

Microchip Technology

IC TRANSCEIVER FULL 4/4 32QFN