IRFS59N10DTRRP
For Reference Only
| Part Number | IRFS59N10DTRRP |
| PNEDA Part # | IRFS59N10DTRRP |
| Description | MOSFET N-CH 100V 59A D2PAK |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 5,292 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 21 - Jun 26 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IRFS59N10DTRRP Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IRFS59N10DTRRP |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IRFS59N10DTRRP Specifications
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 59A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 35.4A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 114nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2450pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 700V Current - Continuous Drain (Id) @ 25°C 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 1.3Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13.9nC @ 10V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 351pF @ 50V FET Feature - Power Dissipation (Max) 41W (Tc) Operating Temperature -55°C ~ 155°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251 Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 74A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 11mOhm @ 15A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2782pF @ 12V FET Feature - Power Dissipation (Max) 148W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
