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IRFSL23N15D

IRFSL23N15D

For Reference Only

Part Number IRFSL23N15D
PNEDA Part # IRFSL23N15D
Description MOSFET N-CH 150V 23A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,912
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 30 - Jul 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFSL23N15D Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFSL23N15D
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFSL23N15D, IRFSL23N15D Datasheet (Total Pages: 12, Size: 144.68 KB)
PDFIRFSL23N15D Datasheet Cover
IRFSL23N15D Datasheet Page 2 IRFSL23N15D Datasheet Page 3 IRFSL23N15D Datasheet Page 4 IRFSL23N15D Datasheet Page 5 IRFSL23N15D Datasheet Page 6 IRFSL23N15D Datasheet Page 7 IRFSL23N15D Datasheet Page 8 IRFSL23N15D Datasheet Page 9 IRFSL23N15D Datasheet Page 10 IRFSL23N15D Datasheet Page 11

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IRFSL23N15D Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs90mOhm @ 14A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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