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IRFSL3207

IRFSL3207

For Reference Only

Part Number IRFSL3207
PNEDA Part # IRFSL3207
Description MOSFET N-CH 75V 180A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,502
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFSL3207 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFSL3207
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFSL3207, IRFSL3207 Datasheet (Total Pages: 12, Size: 379.69 KB)
PDFIRFSL3207 Datasheet Cover
IRFSL3207 Datasheet Page 2 IRFSL3207 Datasheet Page 3 IRFSL3207 Datasheet Page 4 IRFSL3207 Datasheet Page 5 IRFSL3207 Datasheet Page 6 IRFSL3207 Datasheet Page 7 IRFSL3207 Datasheet Page 8 IRFSL3207 Datasheet Page 9 IRFSL3207 Datasheet Page 10 IRFSL3207 Datasheet Page 11

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IRFSL3207 Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs260nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7600pF @ 50V
FET Feature-
Power Dissipation (Max)330W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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