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IRFU1205

IRFU1205

For Reference Only

Part Number IRFU1205
PNEDA Part # IRFU1205
Description MOSFET N-CH 55V 44A I-PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,248
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFU1205 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFU1205
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFU1205, IRFU1205 Datasheet (Total Pages: 11, Size: 149.83 KB)
PDFIRFR1205TRR Datasheet Cover
IRFR1205TRR Datasheet Page 2 IRFR1205TRR Datasheet Page 3 IRFR1205TRR Datasheet Page 4 IRFR1205TRR Datasheet Page 5 IRFR1205TRR Datasheet Page 6 IRFR1205TRR Datasheet Page 7 IRFR1205TRR Datasheet Page 8 IRFR1205TRR Datasheet Page 9 IRFR1205TRR Datasheet Page 10 IRFR1205TRR Datasheet Page 11

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IRFU1205 Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs27mOhm @ 26A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs65nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1300pF @ 25V
FET Feature-
Power Dissipation (Max)107W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageIPAK (TO-251)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power Dissipation (Max)

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Operating Temperature

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Infineon Technologies

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Series

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Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

76A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

8.4mOhm @ 46A, 10V

Vgs(th) (Max) @ Id

3.7V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

109nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4020pF @ 25V

FET Feature

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Power Dissipation (Max)

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Operating Temperature

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Mounting Type

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Supplier Device Package

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Package / Case

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Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

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FET Type

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Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

560mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id

4.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

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Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

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Power Dissipation (Max)

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Operating Temperature

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ON Semiconductor

Manufacturer

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Series

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FET Type

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Technology

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Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

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Power Dissipation (Max)

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Operating Temperature

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Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

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FET Type

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Technology

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

630mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power Dissipation (Max)

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Operating Temperature

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Mounting Type

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Supplier Device Package

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Package / Case

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