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IRFU3418PBF

IRFU3418PBF

For Reference Only

Part Number IRFU3418PBF
PNEDA Part # IRFU3418PBF
Description MOSFET N-CH 80V 70A I-PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,322
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFU3418PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFU3418PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFU3418PBF, IRFU3418PBF Datasheet (Total Pages: 11, Size: 239.08 KB)
PDFIRFR3418TRPBF Datasheet Cover
IRFR3418TRPBF Datasheet Page 2 IRFR3418TRPBF Datasheet Page 3 IRFR3418TRPBF Datasheet Page 4 IRFR3418TRPBF Datasheet Page 5 IRFR3418TRPBF Datasheet Page 6 IRFR3418TRPBF Datasheet Page 7 IRFR3418TRPBF Datasheet Page 8 IRFR3418TRPBF Datasheet Page 9 IRFR3418TRPBF Datasheet Page 10 IRFR3418TRPBF Datasheet Page 11

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IRFU3418PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs14mOhm @ 18A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs94nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3510pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 140W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageIPAK (TO-251)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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