Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFU9120N

IRFU9120N

For Reference Only

Part Number IRFU9120N
PNEDA Part # IRFU9120N
Description MOSFET P-CH 100V 6.6A I-PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,922
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFU9120N Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFU9120N
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFU9120N, IRFU9120N Datasheet (Total Pages: 11, Size: 122.84 KB)
PDFIRFR9120NTRR Datasheet Cover
IRFR9120NTRR Datasheet Page 2 IRFR9120NTRR Datasheet Page 3 IRFR9120NTRR Datasheet Page 4 IRFR9120NTRR Datasheet Page 5 IRFR9120NTRR Datasheet Page 6 IRFR9120NTRR Datasheet Page 7 IRFR9120NTRR Datasheet Page 8 IRFR9120NTRR Datasheet Page 9 IRFR9120NTRR Datasheet Page 10 IRFR9120NTRR Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFU9120N Datasheet
  • where to find IRFU9120N
  • Infineon Technologies

  • Infineon Technologies IRFU9120N
  • IRFU9120N PDF Datasheet
  • IRFU9120N Stock

  • IRFU9120N Pinout
  • Datasheet IRFU9120N
  • IRFU9120N Supplier

  • Infineon Technologies Distributor
  • IRFU9120N Price
  • IRFU9120N Distributor

IRFU9120N Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs480mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds350pF @ 25V
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageIPAK (TO-251)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

The Products You May Be Interested In

FDU8880

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

13A (Ta), 58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1260pF @ 15V

FET Feature

-

Power Dissipation (Max)

55W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

STV160NF02LT4

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

160A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

2.5mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

160nC @ 10V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

4800pF @ 15V

FET Feature

-

Power Dissipation (Max)

210W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

10-PowerSO

Package / Case

PowerSO-10 Exposed Bottom Pad

GP2M004A065CG

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.4Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

642pF @ 25V

FET Feature

-

Power Dissipation (Max)

98.4W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRL3705ZSTRL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8mOhm @ 52A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

2880pF @ 25V

FET Feature

-

Power Dissipation (Max)

130W (Tc)

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

JAN2N6770T1

Microsemi

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/543

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

500mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

120nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

4W (Ta), 150W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-254AA

Package / Case

TO-254-3, TO-254AA (Straight Leads)

Recently Sold

BYV26C-TAP

BYV26C-TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1A SOD57

IR2214SSTRPBF

IR2214SSTRPBF

Infineon Technologies

IC DVR HALF BRIDGE IC 24SSOP

T495D477K006ATE125

T495D477K006ATE125

KEMET

CAP TANT 470UF 10% 6.3V 2917

FGH40N60SMD

FGH40N60SMD

ON Semiconductor

IGBT 600V 80A 349W TO-247-3

C0805C102K2GECAUTO

C0805C102K2GECAUTO

KEMET

CAP CER 0805 1NF 200V C0G 10%

16SVPF180M

16SVPF180M

Panasonic Electronic Components

CAP ALUM POLY 180UF 20% 16V SMD

SMBJ12CA

SMBJ12CA

TVS DIODE 12V 19.9V SMB

DSC1001DL5-024.0000

DSC1001DL5-024.0000

Microchip Technology

MEMS OSC XO 24.0000MHZ CMOS SMD

3314G-1-103E

3314G-1-103E

Bourns

TRIMMER 10K OHM 0.25W GW TOP ADJ

HSMF-C155

HSMF-C155

Broadcom

LED GREEN/RED DIFFUSED CHIP SMD

ADT7411ARQZ-REEL

ADT7411ARQZ-REEL

Analog Devices

SENSOR DIGITAL -40C-120C 16QSOP

BFG591,115

BFG591,115

NXP

RF TRANS NPN 15V 7GHZ SOT223