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IRFW630BTM-FP001

IRFW630BTM-FP001

For Reference Only

Part Number IRFW630BTM-FP001
PNEDA Part # IRFW630BTM-FP001
Description MOSFET N-CH 200V 9A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,088
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFW630BTM-FP001 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberIRFW630BTM-FP001
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFW630BTM-FP001, IRFW630BTM-FP001 Datasheet (Total Pages: 8, Size: 729.85 KB)
PDFIRFW630BTM-FP001 Datasheet Cover
IRFW630BTM-FP001 Datasheet Page 2 IRFW630BTM-FP001 Datasheet Page 3 IRFW630BTM-FP001 Datasheet Page 4 IRFW630BTM-FP001 Datasheet Page 5 IRFW630BTM-FP001 Datasheet Page 6 IRFW630BTM-FP001 Datasheet Page 7 IRFW630BTM-FP001 Datasheet Page 8

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IRFW630BTM-FP001 Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds720pF @ 25V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 72W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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