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IRFZ34NS

IRFZ34NS

For Reference Only

Part Number IRFZ34NS
PNEDA Part # IRFZ34NS
Description MOSFET N-CH 55V 29A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,474
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFZ34NS Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFZ34NS
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFZ34NS, IRFZ34NS Datasheet (Total Pages: 11, Size: 166.96 KB)
PDFIRFZ34NL Datasheet Cover
IRFZ34NL Datasheet Page 2 IRFZ34NL Datasheet Page 3 IRFZ34NL Datasheet Page 4 IRFZ34NL Datasheet Page 5 IRFZ34NL Datasheet Page 6 IRFZ34NL Datasheet Page 7 IRFZ34NL Datasheet Page 8 IRFZ34NL Datasheet Page 9 IRFZ34NL Datasheet Page 10 IRFZ34NL Datasheet Page 11

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IRFZ34NS Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs40mOhm @ 16A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds700pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 68W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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