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IRG4BC20W

IRG4BC20W

For Reference Only

Part Number IRG4BC20W
PNEDA Part # IRG4BC20W
Description IGBT 600V 13A 60W TO220AB
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,208
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG4BC20W Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG4BC20W
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IRG4BC20W, IRG4BC20W Datasheet (Total Pages: 9, Size: 203.83 KB)
PDFIRG4BC20WPBF Datasheet Cover
IRG4BC20WPBF Datasheet Page 2 IRG4BC20WPBF Datasheet Page 3 IRG4BC20WPBF Datasheet Page 4 IRG4BC20WPBF Datasheet Page 5 IRG4BC20WPBF Datasheet Page 6 IRG4BC20WPBF Datasheet Page 7 IRG4BC20WPBF Datasheet Page 8 IRG4BC20WPBF Datasheet Page 9

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IRG4BC20W Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)13A
Current - Collector Pulsed (Icm)52A
Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 6.5A
Power - Max60W
Switching Energy60µJ (on), 80µJ (off)
Input TypeStandard
Gate Charge26nC
Td (on/off) @ 25°C22ns/110ns
Test Condition480V, 6.5A, 50Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

320µJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Operating Temperature

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Package / Case

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Supplier Device Package

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STMicroelectronics

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

151µJ (on), 293µJ (off)

Input Type

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Gate Charge

149nC

Td (on/off) @ 25°C

37ns/146ns

Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

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Manufacturer

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Series

XPT™, GenX3™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

36A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

600V, 20A, 10Ohm, 15V

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

11A

Current - Collector Pulsed (Icm)

22A

Vce(on) (Max) @ Vge, Ic

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Power - Max

60W

Switching Energy

620µJ (on), 300µJ (off)

Input Type

Standard

Gate Charge

28nC

Td (on/off) @ 25°C

50ns/100ns

Test Condition

800V, 5A, 50Ohm, 15V

Reverse Recovery Time (trr)

51ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AC

FGP20N6S2

ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

28A

Current - Collector Pulsed (Icm)

40A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 7A

Power - Max

125W

Switching Energy

25µJ (on), 58µJ (off)

Input Type

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Gate Charge

30nC

Td (on/off) @ 25°C

7.7ns/87ns

Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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