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IRG4PH40K

IRG4PH40K

For Reference Only

Part Number IRG4PH40K
PNEDA Part # IRG4PH40K
Description IGBT 1200V 30A 160W TO247AC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,626
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG4PH40K Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG4PH40K
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IRG4PH40K, IRG4PH40K Datasheet (Total Pages: 9, Size: 160.22 KB)
PDFIRG4PH40K Datasheet Cover
IRG4PH40K Datasheet Page 2 IRG4PH40K Datasheet Page 3 IRG4PH40K Datasheet Page 4 IRG4PH40K Datasheet Page 5 IRG4PH40K Datasheet Page 6 IRG4PH40K Datasheet Page 7 IRG4PH40K Datasheet Page 8 IRG4PH40K Datasheet Page 9

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IRG4PH40K Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)30A
Current - Collector Pulsed (Icm)60A
Vce(on) (Max) @ Vge, Ic3.4V @ 15V, 15A
Power - Max160W
Switching Energy730µJ (on), 1.66mJ (off)
Input TypeStandard
Gate Charge94nC
Td (on/off) @ 25°C30ns/200ns
Test Condition960V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AC

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

68A

Vce(on) (Max) @ Vge, Ic

4V @ 15V, 17A

Power - Max

150W

Switching Energy

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Input Type

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Gate Charge

120nC

Td (on/off) @ 25°C

100ns/500ns

Test Condition

800V, 17A, 82Ohm, 15V

Reverse Recovery Time (trr)

200ns

Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 50A

Power - Max

300W

Switching Energy

3.3mJ (off)

Input Type

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Gate Charge

167nC

Td (on/off) @ 25°C

70ns/150ns

Test Condition

480V, 50A, 2.7Ohm, 15V

Reverse Recovery Time (trr)

50ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PLUS247™-3

DGTD65T40S2PT

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

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IGBT Type

Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 40A

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230W

Switching Energy

500µJ (on), 400µJ (off)

Input Type

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60nC

Td (on/off) @ 25°C

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Test Condition

400V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247

NGTB30N65IHL2WG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 30A

Power - Max

300W

Switching Energy

200µJ (off)

Input Type

Standard

Gate Charge

135nC

Td (on/off) @ 25°C

-/145ns

Test Condition

400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

430ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

Manufacturer

IXYS

Series

HiPerFAST™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 30A

Power - Max

300W

Switching Energy

200µJ (off)

Input Type

Standard

Gate Charge

95nC

Td (on/off) @ 25°C

18ns/90ns

Test Condition

400V, 30A, 3Ohm, 15V

Reverse Recovery Time (trr)

25ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

TO-268

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