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IRG7CH37K10EF

IRG7CH37K10EF

For Reference Only

Part Number IRG7CH37K10EF
PNEDA Part # IRG7CH37K10EF
Description IGBT CHIP WAFER
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,682
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG7CH37K10EF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG7CH37K10EF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IRG7CH37K10EF, IRG7CH37K10EF Datasheet (Total Pages: 4, Size: 141.16 KB)
PDFIRG7CH37K10EF Datasheet Cover
IRG7CH37K10EF Datasheet Page 2 IRG7CH37K10EF Datasheet Page 3 IRG7CH37K10EF Datasheet Page 4

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IRG7CH37K10EF Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)15A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 15A
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge80nC
Td (on/off) @ 25°C28ns/122ns
Test Condition600V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Current - Collector Pulsed (Icm)

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