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IRG7CH50K10EF

IRG7CH50K10EF

For Reference Only

Part Number IRG7CH50K10EF
PNEDA Part # IRG7CH50K10EF
Description IGBT CHIP WAFER
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,832
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 18 - May 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG7CH50K10EF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG7CH50K10EF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IRG7CH50K10EF, IRG7CH50K10EF Datasheet (Total Pages: 4, Size: 182.43 KB)
PDFIRG7CH50K10EF Datasheet Cover
IRG7CH50K10EF Datasheet Page 2 IRG7CH50K10EF Datasheet Page 3 IRG7CH50K10EF Datasheet Page 4

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IRG7CH50K10EF Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)35A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 25A
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge170nC
Td (on/off) @ 25°C50ns/280ns
Test Condition600V, 35A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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Test Condition

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

480V, 10A, 50Ohm, 15V

Reverse Recovery Time (trr)

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-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

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Current - Collector (Ic) (Max)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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