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IRG7CH75UED-R

IRG7CH75UED-R

For Reference Only

Part Number IRG7CH75UED-R
PNEDA Part # IRG7CH75UED-R
Description IGBT 1200V ULTRA FAST DIE
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,508
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG7CH75UED-R Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG7CH75UED-R
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IRG7CH75UED-R Specifications

ManufacturerInfineon Technologies
Series*
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input Type-
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 20A

Power - Max

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Switching Energy

120µJ (on), 90µJ (off)

Input Type

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Gate Charge

38nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 20A

Power - Max

150W

Switching Energy

300µJ (on), 70µJ (off)

Input Type

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Gate Charge

97nC

Td (on/off) @ 25°C

24ns/250ns

Test Condition

400V, 10A, 20Ohm, 15V

Reverse Recovery Time (trr)

68ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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Microsemi

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

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Power - Max

781W

Switching Energy

3.6mJ (on), 2.64mJ (off)

Input Type

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Gate Charge

340nC

Td (on/off) @ 25°C

25ns/260ns

Test Condition

800V, 50A, 1Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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Manufacturer

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Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

18A

Vce(on) (Max) @ Vge, Ic

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Power - Max

38W

Switching Energy

160µJ (on), 100µJ (off)

Input Type

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Gate Charge

19nC

Td (on/off) @ 25°C

11ns/51ns

Test Condition

480V, 5A, 100Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

D-Pak

IRGI4060DPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

14A

Current - Collector Pulsed (Icm)

23A

Vce(on) (Max) @ Vge, Ic

1.72V @ 15V, 7.5A

Power - Max

37W

Switching Energy

47µJ (on), 141µJ (off)

Input Type

Standard

Gate Charge

19nC

Td (on/off) @ 25°C

29ns/101ns

Test Condition

400V, 7.5A, 47Ohm, 15V

Reverse Recovery Time (trr)

73ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220AB Full-Pak

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