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IRG7CH75UED-R

IRG7CH75UED-R

For Reference Only

Part Number IRG7CH75UED-R
PNEDA Part # IRG7CH75UED-R
Description IGBT 1200V ULTRA FAST DIE
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,508
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG7CH75UED-R Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG7CH75UED-R
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IRG7CH75UED-R Specifications

ManufacturerInfineon Technologies
Series*
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input Type-
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Rohm Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Input Type

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Td (on/off) @ 25°C

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Operating Temperature

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Mounting Type

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Supplier Device Package

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

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