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IRG7CH81K10EF

IRG7CH81K10EF

For Reference Only

Part Number IRG7CH81K10EF
PNEDA Part # IRG7CH81K10EF
Description IGBT 1200V ULTRA FAST DIE
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,470
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG7CH81K10EF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG7CH81K10EF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IRG7CH81K10EF Specifications

ManufacturerInfineon Technologies
Series*
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input Type-
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

88A

Vce(on) (Max) @ Vge, Ic

3.4V @ 15V, 20A

Power - Max

230W

Switching Energy

1.3mJ (on), 500µJ (off)

Input Type

Standard

Gate Charge

53nC

Td (on/off) @ 25°C

20ns/90ns

Test Condition

600V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

195ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

35A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 16A

Power - Max

190W

Switching Energy

380µJ (off)

Input Type

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Gate Charge

33nC

Td (on/off) @ 25°C

30ns/116ns

Test Condition

480V, 16A, 10Ohm, 15V

Reverse Recovery Time (trr)

30ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

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Manufacturer

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Series

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IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

72A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

77nC

Td (on/off) @ 25°C

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Test Condition

400V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr)

102ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

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STMicroelectronics

Manufacturer

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Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 20A

Power - Max

200W

Switching Energy

290µJ (on), 185µJ (off)

Input Type

Standard

Gate Charge

140nC

Td (on/off) @ 25°C

30ns/175ns

Test Condition

400V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

IXBT32N300

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Manufacturer

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Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

3000V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

280A

Vce(on) (Max) @ Vge, Ic

3.2V @ 15V, 32A

Power - Max

400W

Switching Energy

-

Input Type

Standard

Gate Charge

142nC

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

1.5µs

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

TO-268

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