IRG7CH81K10EF
For Reference Only
| Part Number | IRG7CH81K10EF |
| PNEDA Part # | IRG7CH81K10EF |
| Description | IGBT 1200V ULTRA FAST DIE |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 7,470 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 1 - May 6 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IRG7CH81K10EF Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IRG7CH81K10EF |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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IRG7CH81K10EF Specifications
| Manufacturer | Infineon Technologies |
| Series | * |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | - |
| Current - Collector (Ic) (Max) | - |
| Current - Collector Pulsed (Icm) | - |
| Vce(on) (Max) @ Vge, Ic | - |
| Power - Max | - |
| Switching Energy | - |
| Input Type | - |
| Gate Charge | - |
| Td (on/off) @ 25°C | - |
| Test Condition | - |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
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Manufacturer IXYS Series BIMOSFET™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 3000V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 280A Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 32A Power - Max 400W Switching Energy - Input Type Standard Gate Charge 142nC Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) 1.5µs Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package TO-268 |
Manufacturer IXYS Series XPT™, GenX3™ IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 340A Current - Collector Pulsed (Icm) 900A Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 100A Power - Max - Switching Energy 3mJ (on), 1.7mJ (off) Input Type Standard Gate Charge 315nC Td (on/off) @ 25°C 47ns/125ns Test Condition 360V, 100A, 1Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package PLUS247™-3 |
Manufacturer Littelfuse Inc. Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 365V Current - Collector (Ic) (Max) 20A Current - Collector Pulsed (Icm) 50A Vce(on) (Max) @ Vge, Ic 2.2V @ 3.7V, 10A Power - Max 165W Switching Energy - Input Type Logic Gate Charge - Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package D2PAK |
