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IRG7PH35UD-EP

IRG7PH35UD-EP

For Reference Only

Part Number IRG7PH35UD-EP
PNEDA Part # IRG7PH35UD-EP
Description IGBT 1200V 50A COPAK247
Manufacturer Infineon Technologies
Unit Price
1 ---------- $57.0707
100 ---------- $54.3955
250 ---------- $51.7203
500 ---------- $49.0452
750 ---------- $46.8158
1,000 ---------- $44.5865
In Stock 2,902
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG7PH35UD-EP Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG7PH35UD-EP
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IRG7PH35UD-EP Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)50A
Current - Collector Pulsed (Icm)60A
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 20A
Power - Max180W
Switching Energy1.06mJ (on), 620µJ (off)
Input TypeStandard
Gate Charge85nC
Td (on/off) @ 25°C30ns/160ns
Test Condition600V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)105ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

66nC

Td (on/off) @ 25°C

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Test Condition

400V, 24A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

190W

Switching Energy

440µJ (on), 700µJ (off)

Input Type

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Gate Charge

77nC

Td (on/off) @ 25°C

21ns/200ns

Test Condition

400V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr)

30ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

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FGD2N40L

ON Semiconductor

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

400V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

29A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Td (on/off) @ 25°C

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Test Condition

300V, 2.5A, 51Ohm, 4V

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Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

41A

Current - Collector Pulsed (Icm)

82A

Vce(on) (Max) @ Vge, Ic

3.1V @ 15V, 21A

Power - Max

160W

Switching Energy

1.8mJ (on), 1.93mJ (off)

Input Type

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Gate Charge

86nC

Td (on/off) @ 25°C

46ns/97ns

Test Condition

800V, 21A, 10Ohm, 15V

Reverse Recovery Time (trr)

63ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AC

Manufacturer

IXYS

Series

-

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

32A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 15A

Power - Max

125W

Switching Energy

1.55mJ (on), 1.7mJ (off)

Input Type

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Gate Charge

48nC

Td (on/off) @ 25°C

-

Test Condition

600V, 15A, 56Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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