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IRGB4710DPBF

IRGB4710DPBF

For Reference Only

Part Number IRGB4710DPBF
PNEDA Part # IRGB4710DPBF
Description IGBT 600V TO220 COPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,524
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 28 - Jul 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRGB4710DPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRGB4710DPBF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IRGB4710DPBF Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input Type-
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 40A

Power - Max

200W

Switching Energy

550µJ (off)

Input Type

Standard

Gate Charge

140nC

Td (on/off) @ 25°C

18ns/190ns

Test Condition

480V, 40A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Infineon Technologies

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Series

TrenchStop®

IGBT Type

NPT, Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

20A

Current - Collector Pulsed (Icm)

30A

Vce(on) (Max) @ Vge, Ic

2.05V @ 15V, 10A

Power - Max

110W

Switching Energy

430µJ

Input Type

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Gate Charge

62nC

Td (on/off) @ 25°C

12ns/215ns

Test Condition

400V, 10A, 23Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

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IKD06N60RAATMA2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop®

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

12A

Current - Collector Pulsed (Icm)

18A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

48nC

Td (on/off) @ 25°C

12ns/127ns

Test Condition

400V, 6A, 23Ohm, 15V

Reverse Recovery Time (trr)

68ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

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RJH60D6DPK-00#T0

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 40A

Power - Max

260W

Switching Energy

850µJ (on), 600µJ (off)

Input Type

Standard

Gate Charge

104nC

Td (on/off) @ 25°C

50ns/160ns

Test Condition

300V, 40A, 5Ohm, 15V

Reverse Recovery Time (trr)

100ns

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

TO-3P

APT25GR120BD15

Microsemi

Manufacturer

Microsemi Corporation

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

3.2V @ 15V, 25A

Power - Max

521W

Switching Energy

742µJ (on), 427µJ (off)

Input Type

Standard

Gate Charge

203nC

Td (on/off) @ 25°C

16ns/122ns

Test Condition

600V, 25A, 4.3Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247

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