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IRGB6B60KPBF

IRGB6B60KPBF

For Reference Only

Part Number IRGB6B60KPBF
PNEDA Part # IRGB6B60KPBF
Description IGBT 600V 13A 90W TO220AB
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,830
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRGB6B60KPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRGB6B60KPBF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IRGB6B60KPBF Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)13A
Current - Collector Pulsed (Icm)26A
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 5A
Power - Max90W
Switching Energy110µJ (on), 135µJ (off)
Input TypeStandard
Gate Charge18.2nC
Td (on/off) @ 25°C25ns/215ns
Test Condition400V, 5A, 100Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

130A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 24A

Power - Max

190W

Switching Energy

400µJ (on), 300µJ (off)

Input Type

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Gate Charge

64nC

Td (on/off) @ 25°C

21ns/143ns

Test Condition

360V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr)

25ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

76A

Current - Collector Pulsed (Icm)

105A

Vce(on) (Max) @ Vge, Ic

1.85V @ 15V, 35A

Power - Max

268W

Switching Energy

390µJ (on), 632µJ (off)

Input Type

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Gate Charge

104nC

Td (on/off) @ 25°C

46ns/105ns

Test Condition

400V, 35A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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APT50GR120L

Microsemi

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

445nC

Td (on/off) @ 25°C

28ns/237ns

Test Condition

600V, 50A, 4.3Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264

Manufacturer

IXYS

Series

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IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

3.4V @ 15V, 20A

Power - Max

190W

Switching Energy

2.1mJ (off)

Input Type

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Gate Charge

72nC

Td (on/off) @ 25°C

25ns/150ns

Test Condition

960V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

40ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

TO-268

FGB40N60SM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

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IGBT Type

Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 40A

Power - Max

349W

Switching Energy

870µJ (on), 260µJ (off)

Input Type

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Gate Charge

119nC

Td (on/off) @ 25°C

12ns/92ns

Test Condition

400V, 40A, 6Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB (D²PAK)

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