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IRGB8B60KPBF

IRGB8B60KPBF

For Reference Only

Part Number IRGB8B60KPBF
PNEDA Part # IRGB8B60KPBF
Description IGBT 600V 28A 167W TO220AB
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,416
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRGB8B60KPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRGB8B60KPBF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IRGB8B60KPBF Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)28A
Current - Collector Pulsed (Icm)26A
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 8A
Power - Max167W
Switching Energy160µJ (on), 160µJ (off)
Input TypeStandard
Gate Charge18.2nC
Td (on/off) @ 25°C23ns/140ns
Test Condition400V, 5A, 100Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

96A

Vce(on) (Max) @ Vge, Ic

3.4V @ 15V, 20A

Power - Max

278W

Switching Energy

1.3mJ (on), 1mJ (off)

Input Type

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Gate Charge

53nC

Td (on/off) @ 25°C

20ns/90ns

Test Condition

600V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

29ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263HV

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

110A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

6V @ 15V, 42A

Power - Max

1040W

Switching Energy

3.8mJ (off)

Input Type

Standard

Gate Charge

358nC

Td (on/off) @ 25°C

26ns/418ns

Test Condition

1360V, 42A, 1Ohm, 15V

Reverse Recovery Time (trr)

360ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PLUS247™-3

RGW00TK65DGVC11

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

45A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 50A

Power - Max

89W

Switching Energy

1.18mJ (on), 960µJ (off)

Input Type

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Gate Charge

141nC

Td (on/off) @ 25°C

52ns/180ns

Test Condition

400V, 50A, 10Ohm, 15V

Reverse Recovery Time (trr)

95ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3PFM, SC-93-3

Supplier Device Package

TO-3PFM

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop®

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

150A

Current - Collector Pulsed (Icm)

225A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 75A

Power - Max

428W

Switching Energy

4.5mJ

Input Type

Standard

Gate Charge

470nC

Td (on/off) @ 25°C

33ns/330ns

Test Condition

400V, 75A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PG-TO247-3

IGW30N60H3FKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop®

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 30A

Power - Max

187W

Switching Energy

1.38mJ

Input Type

Standard

Gate Charge

165nC

Td (on/off) @ 25°C

21ns/207ns

Test Condition

400V, 30A, 10.5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PG-TO247-3

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