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IRGP4760DPBF

IRGP4760DPBF

For Reference Only

Part Number IRGP4760DPBF
PNEDA Part # IRGP4760DPBF
Description IGBT 650V TO-247
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,228
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRGP4760DPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRGP4760DPBF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IRGP4760DPBF, IRGP4760DPBF Datasheet (Total Pages: 12, Size: 926.86 KB)
PDFIRGP4760DPBF Datasheet Cover
IRGP4760DPBF Datasheet Page 2 IRGP4760DPBF Datasheet Page 3 IRGP4760DPBF Datasheet Page 4 IRGP4760DPBF Datasheet Page 5 IRGP4760DPBF Datasheet Page 6 IRGP4760DPBF Datasheet Page 7 IRGP4760DPBF Datasheet Page 8 IRGP4760DPBF Datasheet Page 9 IRGP4760DPBF Datasheet Page 10 IRGP4760DPBF Datasheet Page 11

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IRGP4760DPBF Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)90A
Current - Collector Pulsed (Icm)144A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 48A
Power - Max325W
Switching Energy1.7mJ (on), 1mJ (off)
Input TypeStandard
Gate Charge145nC
Td (on/off) @ 25°C70ns/140ns
Test Condition400V, 48A, 10Ohm, 15V
Reverse Recovery Time (trr)170ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AC

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Gate Charge

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Td (on/off) @ 25°C

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Operating Temperature

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

GenX4™, XPT™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

400V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PLUS247™-3

IXSH30N60B

IXYS

Manufacturer

IXYS

Series

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IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

200W

Switching Energy

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Input Type

Standard

Gate Charge

100nC

Td (on/off) @ 25°C

30ns/150ns

Test Condition

480V, 30A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXSH)

IRGP4630DPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

47A

Current - Collector Pulsed (Icm)

54A

Vce(on) (Max) @ Vge, Ic

1.95V @ 15V, 18A

Power - Max

206W

Switching Energy

95µJ (on), 350µJ (off)

Input Type

Standard

Gate Charge

35nC

Td (on/off) @ 25°C

40ns/105ns

Test Condition

400V, 18A, 22Ohm, 15V

Reverse Recovery Time (trr)

100ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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