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IRGP6650DPBF

IRGP6650DPBF

For Reference Only

Part Number IRGP6650DPBF
PNEDA Part # IRGP6650DPBF
Description IGBT 600V 80A 306W TO247AC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,034
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRGP6650DPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRGP6650DPBF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IRGP6650DPBF, IRGP6650DPBF Datasheet (Total Pages: 13, Size: 675.68 KB)
PDFIRGP6650DPBF Datasheet Cover
IRGP6650DPBF Datasheet Page 2 IRGP6650DPBF Datasheet Page 3 IRGP6650DPBF Datasheet Page 4 IRGP6650DPBF Datasheet Page 5 IRGP6650DPBF Datasheet Page 6 IRGP6650DPBF Datasheet Page 7 IRGP6650DPBF Datasheet Page 8 IRGP6650DPBF Datasheet Page 9 IRGP6650DPBF Datasheet Page 10 IRGP6650DPBF Datasheet Page 11

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IRGP6650DPBF Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)80A
Current - Collector Pulsed (Icm)105A
Vce(on) (Max) @ Vge, Ic1.95V @ 15V, 35A
Power - Max306W
Switching Energy300µJ (on), 630µJ (off)
Input TypeStandard
Gate Charge75nC
Td (on/off) @ 25°C40ns/105ns
Test Condition400V, 35A, 10Ohm, 15V
Reverse Recovery Time (trr)50ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AC

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Current - Collector Pulsed (Icm)

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Test Condition

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Operating Temperature

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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