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IRGS15B60KDTRRP

IRGS15B60KDTRRP

For Reference Only

Part Number IRGS15B60KDTRRP
PNEDA Part # IRGS15B60KDTRRP
Description IGBT 600V 31A 208W D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,052
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRGS15B60KDTRRP Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRGS15B60KDTRRP
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IRGS15B60KDTRRP Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)31A
Current - Collector Pulsed (Icm)62A
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 15A
Power - Max208W
Switching Energy220µJ (on), 340µJ (off)
Input TypeStandard
Gate Charge56nC
Td (on/off) @ 25°C34ns/184ns
Test Condition400V, 15A, 22Ohm, 15V
Reverse Recovery Time (trr)92ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

450A

Current - Collector Pulsed (Icm)

1200A

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 160A

Power - Max

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Switching Energy

4.4mJ (on), 3.5mJ (off)

Input Type

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Gate Charge

553nC

Td (on/off) @ 25°C

62ns/245ns

Test Condition

400V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

76ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

170A

Current - Collector Pulsed (Icm)

600A

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 100A

Power - Max

830W

Switching Energy

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Input Type

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Gate Charge

425nC

Td (on/off) @ 25°C

-

Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

1mJ (on), 520µJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

400V, 40A, 10Ohm, 15V

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

31A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 17A

Power - Max

100W

Switching Energy

630µJ (on), 1.39mJ (off)

Input Type

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Gate Charge

51nC

Td (on/off) @ 25°C

42ns/230ns

Test Condition

480V, 17A, 23Ohm, 15V

Reverse Recovery Time (trr)

42ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

Manufacturer

IXYS

Series

XPT™, GenX3™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

86A

Current - Collector Pulsed (Icm)

195A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 40A

Power - Max

300W

Switching Energy

800µJ (on), 1.25mJ (off)

Input Type

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Gate Charge

68nC

Td (on/off) @ 25°C

20ns/140ns

Test Condition

400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

37ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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