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IRGSL4B60KD1PBF

IRGSL4B60KD1PBF

For Reference Only

Part Number IRGSL4B60KD1PBF
PNEDA Part # IRGSL4B60KD1PBF
Description IGBT 600V 11A 63W TO262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,452
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRGSL4B60KD1PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRGSL4B60KD1PBF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IRGSL4B60KD1PBF Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)11A
Current - Collector Pulsed (Icm)22A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 4A
Power - Max63W
Switching Energy73µJ (on), 47µJ (off)
Input TypeStandard
Gate Charge12nC
Td (on/off) @ 25°C22ns/100ns
Test Condition400V, 4A, 100Ohm, 15V
Reverse Recovery Time (trr)93ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackageTO-262

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Mounting Type

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Package / Case

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

2.4mJ (on), 2.2mJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

400V, 75A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Package / Case

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Supplier Device Package

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ON Semiconductor

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Td (on/off) @ 25°C

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Test Condition

300V, 9A, 1kOhm, 5V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

12A

Current - Collector Pulsed (Icm)

52A

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 6.5A

Power - Max

34W

Switching Energy

60µJ (on), 80µJ (off)

Input Type

Standard

Gate Charge

26nC

Td (on/off) @ 25°C

22ns/110ns

Test Condition

480V, 6.5A, 50Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220AB Full-Pak

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Rohm Semiconductor

Manufacturer

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Series

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

88A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 50A

Power - Max

326W

Switching Energy

1.46mJ (on), 1.29mJ (off)

Input Type

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Gate Charge

58nC

Td (on/off) @ 25°C

36ns/115ns

Test Condition

400V, 50A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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