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IRGSL4B60KD1PBF

IRGSL4B60KD1PBF

For Reference Only

Part Number IRGSL4B60KD1PBF
PNEDA Part # IRGSL4B60KD1PBF
Description IGBT 600V 11A 63W TO262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,452
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRGSL4B60KD1PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRGSL4B60KD1PBF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IRGSL4B60KD1PBF Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)11A
Current - Collector Pulsed (Icm)22A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 4A
Power - Max63W
Switching Energy73µJ (on), 47µJ (off)
Input TypeStandard
Gate Charge12nC
Td (on/off) @ 25°C22ns/100ns
Test Condition400V, 4A, 100Ohm, 15V
Reverse Recovery Time (trr)93ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackageTO-262

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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IRG4IBC20WPBF

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

52A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

480V, 6.5A, 50Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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Manufacturer

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Series

HiPerFAST™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 32A

Power - Max

200W

Switching Energy

600µJ (off)

Input Type

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Gate Charge

110nC

Td (on/off) @ 25°C

25ns/100ns

Test Condition

480V, 32A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

25ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

RJH60A85RDPE-00#J3

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

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IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

30A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 15A

Power - Max

113W

Switching Energy

430µJ (on), 300µJ (off)

Input Type

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Gate Charge

56nC

Td (on/off) @ 25°C

40ns/86ns

Test Condition

300V, 15A, 5Ohm, 15V

Reverse Recovery Time (trr)

160ns

Operating Temperature

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Supplier Device Package

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