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IRL3502S

IRL3502S

For Reference Only

Part Number IRL3502S
PNEDA Part # IRL3502S
Description MOSFET N-CH 20V 110A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,574
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRL3502S Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRL3502S
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRL3502S, IRL3502S Datasheet (Total Pages: 9, Size: 134.07 KB)
PDFIRL3502STRR Datasheet Cover
IRL3502STRR Datasheet Page 2 IRL3502STRR Datasheet Page 3 IRL3502STRR Datasheet Page 4 IRL3502STRR Datasheet Page 5 IRL3502STRR Datasheet Page 6 IRL3502STRR Datasheet Page 7 IRL3502STRR Datasheet Page 8 IRL3502STRR Datasheet Page 9

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IRL3502S Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 7V
Rds On (Max) @ Id, Vgs7mOhm @ 64A, 7V
Vgs(th) (Max) @ Id700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 4.5V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds4700pF @ 15V
FET Feature-
Power Dissipation (Max)140W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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