Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRL3502STRLPBF

IRL3502STRLPBF

For Reference Only

Part Number IRL3502STRLPBF
PNEDA Part # IRL3502STRLPBF
Description MOSFET N-CH 20V 110A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,952
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 10 - May 15 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRL3502STRLPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRL3502STRLPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRL3502STRLPBF, IRL3502STRLPBF Datasheet (Total Pages: 9, Size: 242.66 KB)
PDFIRL3502STRLPBF Datasheet Cover
IRL3502STRLPBF Datasheet Page 2 IRL3502STRLPBF Datasheet Page 3 IRL3502STRLPBF Datasheet Page 4 IRL3502STRLPBF Datasheet Page 5 IRL3502STRLPBF Datasheet Page 6 IRL3502STRLPBF Datasheet Page 7 IRL3502STRLPBF Datasheet Page 8 IRL3502STRLPBF Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRL3502STRLPBF Datasheet
  • where to find IRL3502STRLPBF
  • Infineon Technologies

  • Infineon Technologies IRL3502STRLPBF
  • IRL3502STRLPBF PDF Datasheet
  • IRL3502STRLPBF Stock

  • IRL3502STRLPBF Pinout
  • Datasheet IRL3502STRLPBF
  • IRL3502STRLPBF Supplier

  • Infineon Technologies Distributor
  • IRL3502STRLPBF Price
  • IRL3502STRLPBF Distributor

IRL3502STRLPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 7V
Rds On (Max) @ Id, Vgs7mOhm @ 64A, 7V
Vgs(th) (Max) @ Id700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 4.5V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds4700pF @ 15V
FET Feature-
Power Dissipation (Max)140W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

170nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4500pF @ 25V

FET Feature

-

Power Dissipation (Max)

360W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD (IXFH)

Package / Case

TO-247-3

STFI10NK60Z

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1370pF @ 25V

FET Feature

-

Power Dissipation (Max)

35W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAKFP (TO-281)

Package / Case

TO-262-3 Full Pack, I²Pak

AOD4185L_003

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

15mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18.6nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2550pF @ 20V

FET Feature

-

Power Dissipation (Max)

62.5W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

SQJ422EP-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

74A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.4mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4660pF @ 20V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

IRFU014

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

7.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

200mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-251AA

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Recently Sold

HCTI-10-20.0

HCTI-10-20.0

Signal Transformer

FIXED IND 10UH 20A 5 MOHM TH

XC18V04PCG44C

XC18V04PCG44C

Xilinx

IC PROM REPROGR 4MB 44-PLCC

AOZ8808DI-05

AOZ8808DI-05

Alpha & Omega Semiconductor

TVS DIODE 5V 9V 10DFN

WSL25122L000FEA

WSL25122L000FEA

Vishay Dale

RES 0.002 OHM 1% 1W 2512

PD55015-E

PD55015-E

STMicroelectronics

FET RF 40V 500MHZ PWRSO-10

JAN1N5811

JAN1N5811

Microsemi

DIODE GEN PURP 150V 6A AXIAL

SP3232EET-L

SP3232EET-L

MaxLinear, Inc.

IC TRANSCEIVER FULL 2/2 16SOIC

SQJ459EP-T1_GE3

SQJ459EP-T1_GE3

Vishay Siliconix

MOSFET P-CH 60V 52A POWERPAKSO-8

EPCS4SI8N

EPCS4SI8N

Intel

IC CONFIG DEVICE 4MBIT 8SOIC

ISL6262CRZ

ISL6262CRZ

Renesas Electronics America Inc.

IC REG CONV INTEL 1OUT 48QFN

DEA1X3D470JN2A

DEA1X3D470JN2A

Murata

CAP CER 47PF 2KV SL RADIAL

AD623ANZ

AD623ANZ

Analog Devices

IC INST AMP 1 CIRCUIT 8DIP