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IRL40S212

IRL40S212

For Reference Only

Part Number IRL40S212
PNEDA Part # IRL40S212
Description MOSFET N-CH 40V 195A
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,894
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRL40S212 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRL40S212
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRL40S212, IRL40S212 Datasheet (Total Pages: 12, Size: 618.36 KB)
PDFIRL40S212 Datasheet Cover
IRL40S212 Datasheet Page 2 IRL40S212 Datasheet Page 3 IRL40S212 Datasheet Page 4 IRL40S212 Datasheet Page 5 IRL40S212 Datasheet Page 6 IRL40S212 Datasheet Page 7 IRL40S212 Datasheet Page 8 IRL40S212 Datasheet Page 9 IRL40S212 Datasheet Page 10 IRL40S212 Datasheet Page 11

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IRL40S212 Specifications

ManufacturerInfineon Technologies
SeriesStrongIRFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id2.4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs137nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8320pF @ 25V
FET Feature-
Power Dissipation (Max)231W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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