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IRL60B216

IRL60B216

For Reference Only

Part Number IRL60B216
PNEDA Part # IRL60B216
Description MOSFET N-CH 60V 195A
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 13,260
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRL60B216 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRL60B216
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRL60B216, IRL60B216 Datasheet (Total Pages: 10, Size: 733.97 KB)
PDFIRL60B216 Datasheet Cover
IRL60B216 Datasheet Page 2 IRL60B216 Datasheet Page 3 IRL60B216 Datasheet Page 4 IRL60B216 Datasheet Page 5 IRL60B216 Datasheet Page 6 IRL60B216 Datasheet Page 7 IRL60B216 Datasheet Page 8 IRL60B216 Datasheet Page 9 IRL60B216 Datasheet Page 10

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IRL60B216 Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®, StrongIRFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs258nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds15570pF @ 25V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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