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IRL8113L

IRL8113L

For Reference Only

Part Number IRL8113L
PNEDA Part # IRL8113L
Description MOSFET N-CH 30V 105A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,652
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRL8113L Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRL8113L
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRL8113L, IRL8113L Datasheet (Total Pages: 13, Size: 308.15 KB)
PDFIRL8113S Datasheet Cover
IRL8113S Datasheet Page 2 IRL8113S Datasheet Page 3 IRL8113S Datasheet Page 4 IRL8113S Datasheet Page 5 IRL8113S Datasheet Page 6 IRL8113S Datasheet Page 7 IRL8113S Datasheet Page 8 IRL8113S Datasheet Page 9 IRL8113S Datasheet Page 10 IRL8113S Datasheet Page 11

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IRL8113L Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C105A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6mOhm @ 21A, 10V
Vgs(th) (Max) @ Id2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2840pF @ 15V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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