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IRLBD59N04ETRLP

IRLBD59N04ETRLP

For Reference Only

Part Number IRLBD59N04ETRLP
PNEDA Part # IRLBD59N04ETRLP
Description MOSFET N-CH 40V 59A D2PAK-5
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,220
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 21 - Jun 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRLBD59N04ETRLP Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRLBD59N04ETRLP
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRLBD59N04ETRLP, IRLBD59N04ETRLP Datasheet (Total Pages: 9, Size: 122.48 KB)
PDFIRLBD59N04ETRLP Datasheet Cover
IRLBD59N04ETRLP Datasheet Page 2 IRLBD59N04ETRLP Datasheet Page 3 IRLBD59N04ETRLP Datasheet Page 4 IRLBD59N04ETRLP Datasheet Page 5 IRLBD59N04ETRLP Datasheet Page 6 IRLBD59N04ETRLP Datasheet Page 7 IRLBD59N04ETRLP Datasheet Page 8 IRLBD59N04ETRLP Datasheet Page 9

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IRLBD59N04ETRLP Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C59A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs18mOhm @ 35A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 5V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds2190pF @ 25V
FET Feature-
Power Dissipation (Max)130W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263-5
Package / CaseTO-263-6, D²Pak (5 Leads + Tab), TO-263BA

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