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IRLHM630TR2PBF

IRLHM630TR2PBF

For Reference Only

Part Number IRLHM630TR2PBF
PNEDA Part # IRLHM630TR2PBF
Description MOSFET N-CH 30V 21A PQFN
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,894
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRLHM630TR2PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRLHM630TR2PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IRLHM630TR2PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C21A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs3.5mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id1.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs62nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds3170pF @ 25V
FET Feature-
Power Dissipation (Max)2.7W (Ta), 37W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePQFN (3x3)
Package / Case8-VQFN Exposed Pad

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