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IRLI640G

IRLI640G

For Reference Only

Part Number IRLI640G
PNEDA Part # IRLI640G
Description MOSFET N-CH 200V 9.9A TO220FP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,878
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRLI640G Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRLI640G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRLI640G, IRLI640G Datasheet (Total Pages: 8, Size: 1,711.88 KB)
PDFIRLI640G Datasheet Cover
IRLI640G Datasheet Page 2 IRLI640G Datasheet Page 3 IRLI640G Datasheet Page 4 IRLI640G Datasheet Page 5 IRLI640G Datasheet Page 6 IRLI640G Datasheet Page 7 IRLI640G Datasheet Page 8

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IRLI640G Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C9.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Rds On (Max) @ Id, Vgs180mOhm @ 5.9A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs66nC @ 10V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds1800pF @ 25V
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3 Full Pack, Isolated Tab

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